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Design of X-band low-noise amplifier for optimum matching between noise and power
Wang, Xiao-Mei1,2; Sun, Zhengwen1,2; Chen, Yong1; Wang, Sixiu1,2
2010-07-29
Conference Name2010 2nd International Conference on Education Technology and Computer, ICETC 2010
Source Publication2010 2nd International Conference on Education Technology and Computer, ICETC 2010
Volume5
Pages184-188
Conference DateJune 22, 2010 - June 24, 2010
Correspondent Emailuaowangxiaomei@163.com
Conference PlaceShanghai, China
CountryChina
Author of SourceInt. Assoc. Comput. Sci. Inf. Technol. (IACSIT)
PublisherIEEE Computer Society
Contribution Rank1
AbstractHigh Electron Mobility Transistors (HEMT) plays a crucial role in microwave low noise receivers. Low noise HEMTs are used extensively in the ultra low noise amplifier (LNAs). Design the LNA is difficult for the radio astronomical observations, especially the realization of the simultaneous about the noise matching and the power matching, as well as the full band unconditional stability. With the Agilent Advanced Design System (ADS) simulation tools, the X-band three-stage LNA using NEC-NE3210S01 HEMTs has been designed: Noise Figure<0.6d8; power Gain>30d8 at X-band (7.89.4GHz), full band unconditional stability. 2010 IEEE.
KeywordHigh electron mobility transistors Design Electron mobility Low noise amplifiers
DOI10.1109/ICETC.2010.5529786
URL查看原文
Indexed ByEI
Language英语
ISBN9781424463688
EI Accession Number20103513202576
Citation statistics
Document Type会议论文
Identifierhttp://ir.xao.ac.cn/handle/45760611-7/3141
Collection射电天文研究室_微波技术实验室
Corresponding AuthorWang, Xiao-Mei
Affiliation1.Urumqi Observatory, National Astronomical Observatories, Chinese Academy of Sciences, Urumqi,China,830011;
2.Graduate school, Chinese Academy of Sciences
First Author AffilicationXinjiang Astronomical Observatory, Chinese Academy of Sciences
Corresponding Author AffilicationXinjiang Astronomical Observatory, Chinese Academy of Sciences
Recommended Citation
GB/T 7714
Wang, Xiao-Mei,Sun, Zhengwen,Chen, Yong,et al. Design of X-band low-noise amplifier for optimum matching between noise and power[C]//Int. Assoc. Comput. Sci. Inf. Technol. (IACSIT):IEEE Computer Society,2010:184-188.
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