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Zero bias Schottky diodes use in high performance detection circuits
Fan, Xiaoxi1; Pei, Xin2; Xiong, Xinrong3
2011-09-08
Conference Name2011 International Conference on Electronics and Optoelectronics, ICEOE 2011
Source PublicationICEOE 2011 - 2011 International Conference on Electronics and Optoelectronics, Proceedings
Volume3
PagesV327-V330
Conference DateJuly 29, 2011 - July 31, 2011
Conference PlaceDalian, China
CountryChina
PublisherIEEE Computer Society
Contribution Rank2
AbstractZero bias Schottky diodes often used as microwave power detectors. The detection law is a function of frequency, temperature, power, DC bias and diode parameters such as n (ideality factor) and Is (saturation current). In order to get wider dynamic range, better thermal stability and more accurate square law response over the dynamic range we analyzed these characteristics of the Schottky diodes in MATLAB. Detailed characteristics analysis, related curves and solve methods have been shown in this paper. 2011 IEEE.
KeywordDiodes DC power transmission Detectors MATLAB Microwave measurement Optoelectronic devices Schottky barrier diodes
DOI10.1109/ICEOE.2011.6013291
URL查看原文
Indexed ByEI
Language英语
ISBN978-1-61284-275-2
ISSN978-1-61284-275-2
EI Accession Number20114014386406
Citation statistics
Document Type会议论文
Identifierhttp://ir.xao.ac.cn/handle/45760611-7/4153
Collection射电天文研究室_微波技术实验室
Affiliation1.College of Medical Engineering and Technology, XinJiang Medical University, Urumqi, China;
2.Xinjiang Astronomical Observatory, Chinese Academy of Sciences, Urumqi, China;
3.Department of Electrical Engineering, XinJiang Mechano-Electrical Vocational and Technical Institute, Urumqi, China
Recommended Citation
GB/T 7714
Fan, Xiaoxi,Pei, Xin,Xiong, Xinrong. Zero bias Schottky diodes use in high performance detection circuits[C]:IEEE Computer Society,2011:V327-V330.
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