KMS of Xinjiang Astronomical Observatory, CAS
| 射电天文低温超宽带低噪声放大器研究 | |
| Alternative Title | Research on Cryogenic Ultra-Broadband Low Noise Amplifier for Radio Astronomy |
| 潘北军 | |
| Subtype | 硕士 |
| Thesis Advisor | 陈卯蒸 |
| 2022-05-25 | |
| Degree Grantor | 中国科学院大学 |
| Place of Conferral | 北京 |
| Degree Name | 理学硕士 |
| Degree Discipline | 天文技术与方法 |
| Keyword | 射电天文，超宽带接收机，低噪声放大器，单片微波集成电路 |
| Abstract | 射电天文超宽带接收机目前面临众多技术挑战，其中关键难点之一是低温超宽带低噪声放大器。该论文主要研究射电天文低温超宽带低噪声放大器的设计方法，为超宽带接收机的关键技术攻关做前期准备。 面对复杂多样的半导体工艺类型，通过对半导体材料、晶体管类型、集成电路结构及芯片代工厂家的分析与调研，选择了以砷化镓材料为衬底的单片微波集成电路（Monolithic Microwave Integrated Circuits,MMIC）为低噪声放大器研制工艺。针对放大器指标设置模糊无统一标准问题，依据超宽带接收机性能需求和天文观测特点，并结合微波电路工作原理，探讨并提出了放大器参数指标设定的一般原则。针对低温工作环境中的放大器会出现指标突变问题，梳理并总结了晶体管低温下小信号模型等效电路和噪声模型等效电路，为提取低温环境中的晶体管参数提供了便捷性。为设计出射电天文超宽带低噪声放大器，该文系统地研究了低噪声放大器原理图设计、版图设计和封装设计，仿真和部分实测结果表明设计方法可靠有效，设计和研制出的放大器性能指标基本可满足射电天文应用需求。 该论文取得成果如下：（1）利用法国OMMIC公司70 nm栅长砷化镓衬底改性高电子迁移率晶体管（metamorphic High Electron Mobility Transistor，mHEMT）工艺，实现了0.3-20 GHz超宽带低噪声放大器的设计，仿真增益40±2.5 dB，噪声温度全频带低于62 K；实现了4-40 GHz超宽带低噪声放大器的设计，仿真增益40±2.5 dB，噪声温度全频带低于95 K。（2）利用台湾稳懋公司180 nm 栅长砷化镓衬底假晶高电子迁移率晶体管（pseudomorphic HEMT，pHEMT）工艺，实现了0.4-6 GHz超宽带低噪声放大器的设计，仿真增益35±0.2 dB，噪声系数全频带低于0.75 dB；实现了18-26.5 GHz宽带低噪声放大器的设计，仿真增益30±2 dB，噪声系数全频带低于0.9 dB。（3）利用pHEMT晶体管ATF54143，完成了一款400-800 MHz分立器件宽带低噪声放大器的研制，实测增益28±0.5 dB，输入输出回波损耗小于--10 dB， 噪声系数全频带小于0.5 dB，频带内稳定，无自激振荡，基本可满足射电天文应用要求。 该论文创新点如下：（1）实现了低噪声放大器超带宽性能，可覆盖射电天文P、L、S、C、X、Ku、K、Ka波段，在不增加系统复杂度的情况下，极大提高射电望远镜观测效率。（2）该文中采用三种高电子迁移率晶体管工艺，分别设计了5款放大器，为射电天文不同波段的低噪声放大器设计提供了有效方法。（3）低噪声放大器在20 K杜瓦中，噪声温度最低预计可降至10 K以下，进而降低超宽带接收机系统噪声温度，能有效地提高射电望远镜灵敏度。 |
| Other Abstract | Radio astronomy ultra-wideband receivers currently face many technical challenges, one of which is the cryogenic ultra-wideband low-noise amplifier. This paper mainly studies the design method of cryogenic ultra-wideband low-noise amplifiers for radio astronomy, and makes preliminary preparations for the key technology research of ultra-wideband receivers. In the face of complex and diverse semiconductor process types, through the analysis and investigation of semiconductor materials, transistor types, integrated circuit structures and chip foundries, a monolithic microwave integrated circuit(MMIC) based on gallium arsenide material was selected. Aiming at the problem that the amplifier index setting is ambiguous and has no unified standard, according to the performance requirements of the ultra-wideband receiver and the characteristics of astronomical observation, combined with the working principle of the microwave circuit, the general principles of the amplifier parameter index setting are discussed and put forward. Aiming at the problem of sudden index changes of amplifiers in low temperature working environment, the small signal model equivalent circuit and noise model equivalent circuit of transistors at low temperature are sorted out and summarized, which provides convenience for extracting transistor parameters in low temperature environment. In order to design an ultra-wideband low noise amplifier for radio astronomy, this paper systematically studies the schematic design, layout design and packaging design of the low noise amplifier. The simulation and part of the actual measurement results show that the design method is reliable and effective, and the designed and developed amplifier performance indicators are basically It can meet the needs of radio astronomy applications. The results of this paper are as follows: (1) The 0.3-20 GHz ultra-wideband low noise is realized by using the 70 nm gate length GaAs substrate modified metamorphic High Electron Mobility Transistor (mHEMT) process from OMMIC, France. The design of the amplifier, the simulation gain is 40±2.5 dB, the noise temperature is lower than 62 K in the whole frequency band; the design of the 4-40 GHz ultra-wideband low noise amplifier is realized, the simulation gain is 40±2.5 dB, and the noise temperature is low in the whole frequency band. at 95K. (2) Utilizing the 180 nm gate length GaAs substrate pseudomorphic high electron mobility transistor (pHEMT) process of Taiwan's WIN Company, the design of 0.4-6 GHz ultra-wideband low noise amplifier was realized, and the simulation gain was 35±0.2 dB, the noise figure is lower than 0.75 dB in the whole frequency band; the design of the 18-26.5 GHz broadband low noise amplifier is realized, the simulation gain is 30±2 dB, and the noise figure is lower than 0.9 dB in the whole frequency band. (3) Using the pHEMT transistor ATF54143, the development of a 400-800 MHz discrete wideband low-noise amplifier is realized. The measured gain is 28±0.5 dB, the input and output return loss is less than -10 dB, and the noise figure is less than 0.5 in the whole frequency band. dB, stable within the frequency band, no self-excited oscillation, basically meeting the requirements of radio astronomy applications. The innovations of this paper are as follows: (1) The ultra-bandwidth performance of the low-noise amplifier is realized, which can cover the radio astronomy P, L, S, C, X, Ku, K, and Ka bands. Greatly improve the observation efficiency of radio telescopes. (2) In this paper, three high electron mobility transistor processes are used, and five amplifiers are designed respectively, which provides an effective method for the design of low noise amplifiers in different bands of radio astronomy. (3) In the 20 K Dewar, the lowest noise temperature of the low-noise amplifier is expected to drop below 10 K, thereby reducing the noise temperature of the ultra-wideband receiver system and effectively improving the sensitivity of the radio telescope. |
| Pages | 80 |
| Language | 中文 |
| Document Type | 学位论文 |
| Identifier | http://ir.xao.ac.cn/handle/45760611-7/5165 |
| Collection | 研究生学位论文 |
| Affiliation | 中国科学院新疆天文台 |
| First Author Affilication | Xinjiang Astronomical Observatory, Chinese Academy of Sciences |
| Recommended Citation GB/T 7714 | 潘北军. 射电天文低温超宽带低噪声放大器研究[D]. 北京. 中国科学院大学,2022. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| 射电天文低温超宽带低噪声放大器研究_潘北（12164KB） | 学位论文 | 暂不开放 | CC BY-NC-SA | Application Full Text | ||
Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.
Edit Comment